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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FD 800 R 33 KF2
Datenblatt data sheet
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. Current Grenzlastintegral der Diode I2t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode Isolations-Prufspannung insulation test voltage Teilentladungs-Aussetzspannung partial discharge extinction voltage tP = 1 ms Tj = 25C Tj = -25C TC = 80C TC = 25 C tP = 1 ms, TC = 80C VCES 3300 3300 800 1300 1600 V V A A A
IC,nom. IC ICRM
TC=25C, Transistor
Ptot
9,6
kW
VGES
+/- 20V
V
IF
800
A
IFRM
1600
A
VR = 0V, tp = 10ms, TVj = 125C
I2t
222.200
A2s
Tj = 125C
PRQM
800
kW
RMS, f = 50 Hz, t = 1 min.
VISOL
6.000
V
RMS, f = 50 Hz, QPD 10 pC (acc. to IEC 1287)
VISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800 A, VGE = 15V, Tvj = 25C IC = 800 A, VGE = 15V, Tvj = 125C IC = 80 mA, VCE = VGE, Tvj = 25C VGE(th) VCE sat
min.
4,2
typ.
3,40 4,30 5,1
max.
4,25 5,00 6,0 V V V
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V
Cies
-
100
-
nF
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V
Cres
-
5,4
-
nF
VGE = -15V ... + 15V, VCE = 1800V VCE = 3300V, VGE = 0V, Tvj = 25C VCE = 3300V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C
QG ICES
-
15 0,1 40 -
8 100 400
C mA mA nA
IGES
-
prepared by: Jurgen Gottert approved by: Chr. Lubke; 20.07.99
date of publication : 08.06.99 revision: 2
1 (9)
Datenblatt FD 800 R 33 KF21 20.07.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FD 800 R 33 KF2
Datenblatt data sheet
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 800 A, VCC = 1800V VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 25C VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800 A, VCC = 1800V VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 25C VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 800 A, VCC = 1800V VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 25C VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 800 A, VCC = 1800V VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 25C VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip IC = 800 A, VCC = 1800V, VGE = 15V RG = 1,8 , CGE = 150 nF, Tvj = 125C, LS = 40nH IC = 800 A, VCC = 1800V, VGE = 15V RG = 1,8 , CGE = 150 nF, Tvj = 125C, LS = 40nH tP 10sec, VGE 15V TVj125C, VCC=2500V, VCEmax=VCES -LsCE *dI/dt IGBT (Zweig / arm 1+2 parallel ) Diode (Zweig / arm 3) T = 25C, IGBT (Zweig / arm 1+2 parallel ) T = 25C, Diode (Zweig / arm 3) ISC LsCE 4000 12 25 0,19 0,34 A nH nH m m Eoff 1020 mWs Eon 1920 mWs tf 200 200 ns ns td,off 1550 1700 ns ns tr 250 270 ns ns td,on 370 350 ns ns
min.
typ.
max.
RCC'+EE'
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaspannung forward voltage Sperrstrom reverse current Ruckstromspitze peak reverse recovery current IF = 800 A, VGE = 0V, Tvj = 25C IF = 800 A, VGE = 0V, Tvj = 125C VCE = 3300V, Tvj = 25C, Zweig / arm 3 VCE = 3300V, Tvj = 125C, Zweig / arm 3 IF = 800 A, - diF/dt = 2500 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 800 A, - diF/dt = 2500 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 800 A, - diF/dt = 2500 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Erec 490 1000 mWs mWs Qr 500 900 As As IRM 650 700 A A IR VF
min.
-
typ.
2,80 2,80 0,01 4
max.
3,50 3,50 1,6 20 V V mA mA
2 (9)
Datenblatt FD 800 R 33 KF21 20.07.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FD 800 R 33 KF2
Datenblatt data sheet
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Diode/Diode, DC, Zweig / arm 1+2 Diode/Diode, DC, Zweig / arm 3 Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK RthJC -
typ.
0,004
max.
0,013 0,026 0,026 K/W K/W K/W K/W
Tvj
-
-
150
C
Top
-40
-
125
C
Tstg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M4 terminals M8 G M1 AlSiC
AlN
32,2
mm
19,1
mm
> 400 5 Nm
M2
2 8 .. 10 1500
Nm Nm g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3 (9)
Datenblatt FD 800 R 33 KF21 20.07.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FD 800 R 33 KF2
Datenblatt data sheet Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE)
VGE = 15V
1600 1400
T = 25C
1200 1000
T = 125C
IC [A]
800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
1600 1400 1200 1000
I C = f (VCE)
Tvj = 125C
VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V
IC [A]
800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
VCE [V]
4 (9)
Datenblatt FD 800 R 33 KF21 20.07.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FD 800 R 33 KF2
Datenblatt data sheet Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE)
VCE = 20V
1600 1400 1200 1000
T = 25C T = 125C
IC [A]
800 600 400 200 0 5 6 7 8 9 10 11 12 13
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
1600 1400 1200 1000
Tj = 25C Tj = 125C
I F = f (VF)
IF [A]
800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VF [V]
5 (9)
Datenblatt FD 800 R 33 KF21 20.07.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FD 800 R 33 KF2
Datenblatt data sheet Schaltverluste (typisch) Switching losses (typical) E on = f (IC) , E off = f (IC) , E rec = f (IC)
RG,on = 1,8 , RG,off = 1,8 , CGE = 150 nF, VCE = 1800V, Tj = 125C
7000
Eon
6000
Eoff Erec
5000 E [mJ] 4000
3000 2000
1000 0 0 200 400 600 800 1000 1200 1400 1600
IC [A]
Schaltverluste (typisch) Switching losses (typical)
8000 7000 6000 5000 E [mJ] 4000 3000 2000 1000 0 0 2 4 6 8 10
Eon Eoff Erec
E on = f (RG) , E off = f (RG) , E rec = f (RG)
IC = 800 A , CGE = 150 nF, VCE = 1800V , Tj = 125C
12
14
16
18
20
22
24
RG []
6 (9)
Datenblatt FD 800 R 33 KF21 20.07.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FD 800 R 33 KF2
Datenblatt data sheet
Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA)
1800 1600 1400 1200 1000 IC [A] 800 600 400 200 0 0 500 1000 1500 2000
IC,Modul IC,Chip
RG,off = 1,8 , CGE = 150 nF Tvj= 125C
2500
3000
3500
VCE [V]
Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA)
1800 1600 1400 1200 1000 IR [A] 800 600 400 200 0 0 500 1000 1500 2000 2500
T = 125C vj
3000
3500
VR [V]
7 (9)
Datenblatt FD 800 R 33 KF21 20.07.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FD 800 R 33 KF2
Datenblatt data sheet Transienter Warmewiderstand Transient thermal impedance
0,1
Z
thJC
= f (t)
Zth:IGBT Zth:Diode
0,01
ZthJC [K / W]
0,001
0,0001 0,001
0,01
0,1
1
10
t [sec]
i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec]
: Diode
1 2,38 0,0068 4,76 0,0068
2 6,49 0,0642 12,98 0,0642
3 1,93 0,3209 3,86 0,3209
4 2,20 2,0212 4,40 2,0212
8 (9)
Datenblatt FD 800 R 33 KF21 20.07.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FD 800 R 33 KF2
Datenblatt data sheet
Gehausemae / Schaltbild Package outline / Circuit diagram
9 (9)
Datenblatt FD 800 R 33 KF21 20.07.99

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